Manufacture :NXP SEMICONDUCTORS
60V,Drain to Source Voltage (Vdss)
139 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
2N7002,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 300mA (Ta) 5 Ohm @ 500mA, 10V 2.5V @ 250µA - 50pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002P,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 360mA (Ta) 1.6 Ohm @ 500mA, 10V 2.4V @ 250µA 0.8nC @ 4.5V 50pF @ 10V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
2N7002E,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 385mA (Ta) 3 Ohm @ 500mA, 10V 2.5V @ 250µA 0.69nC @ 10V 50pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
PSMN015-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 50A 14.8 mOhm @ 15A, 10V 4V @ 1mA 20.9nC @ 10V 1220pF @ 30V 86W Through Hole TO-220-3
PSMN7R6-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 92A (Tc) 7.8 mOhm @ 25A, 10V 4V @ 1mA 38.7nC @ 10V 2651pF @ 30V 149W Through Hole TO-220-3
PSMN4R6-60PS,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 100A 4.6 mOhm @ 25A, 10V 4V @ 1mA 70.8nC @ 10V 4426pF @ 30V 211W Through Hole TO-220-3
BUK952R8-60E,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 120A (Ta) 2.6 mOhm @ 25A, 10V 2.1V @ 1mA 120nC @ 5V 17450pF @ 25V 349W Through Hole TO-220-3
2N7002BKT,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 290mA (Ta) 1.6 Ohm @ 500mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 50pF @ 10V 260mW Surface Mount SC-75, SOT-416
2N7002BKM,315 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 450mA (Ta) 1.6 Ohm @ 500mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 50pF @ 10V 360mW Surface Mount SC-101, SOT-883
PHB32N06LT,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 34A (Tc) 37 mOhm @ 20A, 10V 2V @ 1mA 17nC @ 5V 1280pF @ 25V 97W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB