Manufacture :NXP SEMICONDUCTORS
55V,Drain to Source Voltage (Vdss)
300W,Power - Max
17 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK764R0-55B,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 4 mOhm @ 25A, 10V 4V @ 1mA 86nC @ 10V 6776pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9606-55A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7506-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 6.3 mOhm @ 25A, 10V 4V @ 1mA - 6000pF @ 25V 300W Through Hole TO-220-3
BUK7510-55AL,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 10 mOhm @ 25A, 10V 4V @ 1mA 124nC @ 10V 6280pF @ 25V 300W Through Hole TO-220-3
BUK754R0-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 4 mOhm @ 25A, 10V 4V @ 1mA 86nC @ 10V 6776pF @ 25V 300W Through Hole TO-220-3
BUK954R2-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95nC @ 5V 10220pF @ 25V 300W Through Hole TO-220-3
BUK9E06-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
PHP191NQ06LT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 3.7 mOhm @ 25A, 10V 2V @ 1mA 95.6nC @ 5V 7665pF @ 25V 300W Through Hole TO-220-3
BUK6C2R1-55C,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 228A (Ta) 2.3 mOhm @ 90A, 10V 2.8V @ 1mA 253nC @ 10V 16000pF @ 25V 300W Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7610-55AL,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 10 mOhm @ 25A, 10V 4V @ 1mA 124nC @ 10V 6280pF @ 25V 300W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB