Manufacture :NXP SEMICONDUCTORS
55V,Drain to Source Voltage (Vdss)
200W,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9610-55A,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 9 mOhm @ 25A, 10V 2V @ 1mA 68nC @ 5V 4307pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK9510-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 9 mOhm @ 25A, 10V 2V @ 1mA 68nC @ 5V 4307pF @ 25V 200W Through Hole TO-220-3
PHB110NQ06LT,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 3960pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP110NQ06LT,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 3960pF @ 25V 200W Through Hole TO-220-3
PHP112N06T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 8 mOhm @ 25A, 10V 4V @ 1mA 87nC @ 10V 4352pF @ 25V 200W Through Hole TO-220-3
PHP119NQ06T,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 2820pF @ 25V 200W Through Hole TO-220-3
PHB112N06T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 8 mOhm @ 25A, 10V 4V @ 1mA 87nC @ 10V 4352pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHB119NQ06T,118 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A (Tc) 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 2820pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB