Manufacture :NXP SEMICONDUCTORS
55V,Drain to Source Voltage (Vdss)
TO-262-3 Long Leads, I²Pak, TO-262AA,Package / Case
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BUK9E08-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7 mOhm @ 25A, 10V 2V @ 1mA 45nC @ 5V 5280pF @ 25V 203W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E06-55A,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.8 mOhm @ 25A, 10V 2V @ 1mA - 8600pF @ 25V 300W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK6E3R2-55C,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 120A 3.2 mOhm @ 25A, 10V 2.8V @ 1mA 258nC @ 10V 15300pF @ 25V 306W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E11-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 11 mOhm @ 25A, 10V 4V @ 1mA 37nC @ 10V 2604pF @ 25V 157W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK7E07-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 7.1 mOhm @ 25A, 10V 4V @ 1mA 53nC @ 10V 3760pF @ 25V 203W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9E06-55B,127 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 55V 75A 5.4 mOhm @ 25A, 10V 2V @ 1mA 60nC @ 5V 7565pF @ 25V 258W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA