Manufacture :NXP SEMICONDUCTORS
300V,Drain to Source Voltage (Vdss)
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSP230,135 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 300V 210mA 17 Ohm @ 170mA, 10V 2.55V @ 1mA - 90pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSP130,115 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 300V 350mA (Ta) 6 Ohm @ 250mA, 10V 2V @ 1mA - 120pF @ 25V 1.5W Surface Mount TO-261-4, TO-261AA
BSN304,126 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 300V 300mA (Ta) 6 Ohm @ 250mA, 10V 2V @ 1mA - 120pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BSP304A,126 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 300V 170mA (Ta) 17 Ohm @ 170mA, 10V 2.55V @ 1mA - 90pF @ 25V 1W Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PHC2300,118 NXP SEMICONDUCTORS
N and P-Channel 300V 340mA 6 Ohm @ 170mA, 10V 2V @ 1mA 6.24nC @ 10V 102pF @ 50V 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)