Manufacture :NXP SEMICONDUCTORS
12V,Drain to Source Voltage (Vdss)
900mV @ 250µA,Vgs(th) (Max) @ Id
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
PMXB40UNE NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 12V 3.2A (Ta) 45 mOhm @ 3.2A, 4.5V 900mV @ 250µA 11.6nC @ 4.5V 556pF @ 10V 400mW Surface Mount 3-XFDFN Exposed Pad
PMPB15XP,115 NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 12V 8.2A (Ta) 19 mOhm @ 8.2A, 4.5V 900mV @ 250µA 100nC @ 4.5V 2875pF @ 6V 1.7W Surface Mount 6-UDFN Exposed Pad
PMPB15XPH NXP SEMICONDUCTORS
MOSFET P-Channel, Metal Oxide 12V 8.2A (Ta) 19 mOhm @ 8.2A, 4.5V 900mV @ 250µA 100nC @ 4.5V 2875pF @ 6V 1.7W Surface Mount 6-UDFN Exposed Pad