Manufacture :NXP SEMICONDUCTORS
50µA @ 600V, Reverse Leakage Current @ Vr
22 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
BYV25FX-600,127 NXP SEMICONDUCTORS
Standard 600V 5A 1.9V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 35ns 50µA @ 600V - 5.5°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYV29F-600,127 NXP SEMICONDUCTORS
Standard 600V 9A 1.9V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 35ns 50µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2
BYV29X-600,127 NXP SEMICONDUCTORS
Standard 600V 9A 1.26V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 60ns 50µA @ 600V - 5.5°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYV29FX-600,127 NXP SEMICONDUCTORS
Standard 600V 9A 1.9V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 35ns 50µA @ 600V - 5.5°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYV29-600,127 NXP SEMICONDUCTORS
Standard 600V 9A 1.25V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 60ns 50µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2
BYV25X-600,127 NXP SEMICONDUCTORS
Standard 600V 5A 1.3V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 60ns 50µA @ 600V - 5.5°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYT79X-600,127 NXP SEMICONDUCTORS
Standard 600V 15A 1.38V @ 15A Fast Recovery =< 500ns, > 200mA (Io) 60ns 50µA @ 600V - 5.9°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
NUR460,133 NXP SEMICONDUCTORS
Standard 600V 4A 1.28V @ 4A Fast Recovery =< 500ns, > 200mA (Io) 60ns 50µA @ 600V - 55°C/W Ja 150°C (Max) Through Hole DO-201AD, Axial
NUR460/L02,112 NXP SEMICONDUCTORS
Standard 600V 4A 1.28V @ 4A Fast Recovery =< 500ns, > 200mA (Io) 65ns 50µA @ 600V - 55°C/W Ja 150°C (Max) Through Hole DO-201AD, Axial
BYT79-600,127 NXP SEMICONDUCTORS
Standard 600V 15A 1.38V @ 15A Fast Recovery =< 500ns, > 200mA (Io) 60ns 50µA @ 600V - 2°C/W Jl 150°C (Max) Through Hole TO-220-2