Manufacture :NXP SEMICONDUCTORS
75ns,Reverse Recovery Time (trr)
175°C (Max),Operating Temperature - Junction
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
NURS360BJ NXP SEMICONDUCTORS
Standard 600V 3A 1V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns - - 14°C/W Jl 175°C (Max) Surface Mount DO-214AA, SMB
NUR460P,133 NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L01U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L02U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L03U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L04U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial