| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAS521,135 | NXP SEMICONDUCTORS | Standard | 300V | 250mA (DC) | 1.1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 150nA @ 250V | 5pF @ 0V, 1MHz | 500°C/W Ja | 150°C (Max) | Surface Mount | SC-79, SOD-523 | |
| BAS521,315 | NXP SEMICONDUCTORS | Standard | 300V | 250mA (DC) | 1.1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 150nA @ 250V | 5pF @ 0V, 1MHz | 500°C/W Ja | 150°C (Max) | Surface Mount | SC-79, SOD-523 | |
| BAS521,115 | NXP SEMICONDUCTORS | Standard | 300V | 250mA (DC) | 1.1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 150nA @ 250V | 5pF @ 0V, 1MHz | 500°C/W Ja | 150°C (Max) | Surface Mount | SC-79, SOD-523 | |
| BAV103,135 | NXP SEMICONDUCTORS | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Surface Mount | SOD-80C | |
| BAV20,113 | NXP SEMICONDUCTORS | Standard | 150V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BAV20,143 | NXP SEMICONDUCTORS | Standard | 150V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BAV20,133 | NXP SEMICONDUCTORS | Standard | 150V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BAV21,113 | NXP SEMICONDUCTORS | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BAV21,143 | NXP SEMICONDUCTORS | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BAV21,133 | NXP SEMICONDUCTORS | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial |
© 2016 Copyright
