Manufacture :NXP SEMICONDUCTORS
20ns,Reverse Recovery Time (trr)
4 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
BYC8DX-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 2.9V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 20ns 40µA @ 600V - 7.2°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYC8D-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 2.9V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 20ns 40µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2
PMEG6030EVPX NXP SEMICONDUCTORS
Schottky 60V 3A 475mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) 20ns 400µA @ 60V 575pF @ 1V, 1MHz 12°C/W Jl 175°C (Max) Surface Mount SOD-128
PMEG6045ETPX NXP SEMICONDUCTORS
Schottky 60V 4.5A 530mV @ 4.5A Fast Recovery =< 500ns, > 200mA (Io) 20ns 400µA @ 60V 575pF @ 1V, 1MHz 12°C/W Jl 175°C (Max) Surface Mount SOD-128