| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMEG2005ELD,315 | NXP SEMICONDUCTORS | Schottky | 20V | 500mA | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 7ns | 30µA @ 10V | 30pF @ 1V, 1MHz | - | 150°C (Max) | Surface Mount | SOD-882D | |
| PMEG2005AELD,315 | NXP SEMICONDUCTORS | Schottky | 20V | 500mA | 440mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 1.5mA @ 20V | 25pF @ 1V, 1MHz | - | 150°C (Max) | Surface Mount | SOD-882D | |
| PMEG4020ETP,115 | NXP SEMICONDUCTORS | Schottky | 40V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 250pF @ 1V, 1MHz | - | - | Surface Mount | SOD-128 | |
| BAW62,113 | NXP SEMICONDUCTORS | Standard | 75V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH, DO-35, Axial | |
| PMEG4030ETP,115 | NXP SEMICONDUCTORS | Schottky | 40V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 350pF @ 1V, 1MHz | - | - | Surface Mount | SOD-128 | |
| PMEG3005ELD,315 | NXP SEMICONDUCTORS | Schottky | 30V | 500mA | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 500µA @ 30V | 30pF @ 1V, 1MHz | - | 150°C (Max) | Surface Mount | SOD-882D | |
| PMEG4050ETP,115 | NXP SEMICONDUCTORS | Schottky | 40V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 40V | 600pF @ 1V, 1MHz | - | - | Surface Mount | SOD-128 | |
| 1PS74SB23,125 | NXP SEMICONDUCTORS | Schottky | 25V | 1A (DC) | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 25V | 100pF @ 4V, 1MHz | - | - | Surface Mount | SC-74, SOT-457 | |
| BYC10-600PQ | NXP SEMICONDUCTORS | Standard | 600V | 10A | 1.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | - | - | - | 150°C (Max) | Through Hole | TO-220-2 | |
| BYW29E-100,127 | NXP SEMICONDUCTORS | Standard | 100V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 100V | - | - | - | Through Hole | TO-220-2 |
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