Manufacture :NXP SEMICONDUCTORS
Fast Recovery =< 500ns, > 200mA (Io),Speed
10µA @ 600V, Reverse Leakage Current @ Vr
9 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
NUR460P,133 NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L01U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L02U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L03U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
NUR460P/L04U NXP SEMICONDUCTORS
Standard 600V 4A 1.05V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 55°C/W Ja 175°C (Max) Through Hole DO-201AD, Axial
BYR29-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 1.5V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2
BYR29X-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 1.7V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYC20X-600PQ NXP SEMICONDUCTORS
Standard 600V 20A 2.5V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 35ns 10µA @ 600V - 3.5°C/W Jh 175°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYC30X-600P,127 NXP SEMICONDUCTORS
Standard 600V 30A 1.8V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 35ns 10µA @ 600V - 3.5°C/W Jh 175°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab