| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMEG6020EPA,115 | NXP SEMICONDUCTORS | Schottky | 60V | 2A | 575mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 78ns | 250µA @ 60V | 250pF @ 1V, 1MHz | 10°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad | |
| PMEG3020EPA,115 | NXP SEMICONDUCTORS | Schottky | 30V | 2A | 470mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 2.5mA @ 30V | 150pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad | |
| PMEG4020EPA,115 | NXP SEMICONDUCTORS | Schottky | 40V | 2A | 535mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 100µA @ 40V | 270pF @ 1V, 1MHz | 10°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad | |
| PMEG2020EPA,115 | NXP SEMICONDUCTORS | Schottky | 20V | 2A | 420mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1.9mA @ 20V | 175pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad | |
| PMEG2010EPA,115 | NXP SEMICONDUCTORS | Schottky | 20V | 1A | 375mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1.9mA @ 20V | 175pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad |
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