| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BAV21,113 | NXP SEMICONDUCTORS | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BAV21,143 | NXP SEMICONDUCTORS | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BAV21,133 | NXP SEMICONDUCTORS | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | 375°C/W Ja | 175°C (Max) | Through Hole | DO-204AH, DO-35, Axial | |
| BYW29EX-200,127 | NXP SEMICONDUCTORS | Standard | 200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | 7.2°C/W Jh | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| BYW29E-200,127 | NXP SEMICONDUCTORS | Standard | 200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | 2.7°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BYV79E-200,127 | NXP SEMICONDUCTORS | Standard | 200V | 14A | 1.05V @ 14A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 50µA @ 200V | - | 2°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 |
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