Manufacture :FAIRCHILD SEMICONDUCTOR CORP
107nC @ 10V,Gate Charge (Qg) @ Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMS86500DC FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 29A (Ta), 108A (Tc) 2.3 mOhm @ 29A, 10V 4.5V @ 250µA 107nC @ 10V 7680pF @ 30V 3.2W Surface Mount 8-TDFN Exposed Pad
FDP2532 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 150V 8A (Ta), 79A (Tc) 16 mOhm @ 33A, 10V 4V @ 250µA 107nC @ 10V 5870pF @ 25V 310W Through Hole TO-220-3
FDB2532 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 150V 8A (Ta), 79A (Tc) 16 mOhm @ 33A, 10V 4V @ 250µA 107nC @ 10V 5870pF @ 25V 310W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB2532_F085 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 150V 79A (Tc) 16 mOhm @ 33A, 10V 4V @ 250µA 107nC @ 10V 5870pF @ 25V 310W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDI2532 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 150V 8A (Ta), 79A (Tc) 16 mOhm @ 33A, 10V 4V @ 250µA 107nC @ 10V 5870pF @ 25V 310W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FDP5645 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 80A (Ta) 9.5 mOhm @ 40A, 10V 4V @ 250µA 107nC @ 10V 4468pF @ 30V 125W Through Hole TO-220-3
FDB5645 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 60V 80A (Ta) 9.5 mOhm @ 40A, 10V 4V @ 250µA 107nC @ 10V 4468pF @ 30V 125W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB