FDI045N10A_F102 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
100V
|
120A (Tc)
|
4.5 mOhm @ 100A, 10V
|
4V @ 250µA
|
74nC @ 10V
|
5270pF @ 50V
|
263W
|
Through Hole
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|
FDP045N10A_F102 |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
100V
|
120A (Tc)
|
4.5 mOhm @ 100A, 10V
|
4V @ 250µA
|
74nC @ 10V
|
5270pF @ 50V
|
263W
|
Through Hole
|
TO-220-3
|
FDP045N10A |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
100V
|
116A (Tc)
|
4.5 mOhm @ 100A, 10V
|
4V @ 250µA
|
74nC @ 10V
|
5270pF @ 50V
|
263W
|
Through Hole
|
TO-220-3
|
FDI045N10A |
FAIRCHILD SEMICONDUCTOR CORP |
|
MOSFET N-Channel, Metal Oxide
|
100V
|
120A (Tc)
|
4.5 mOhm @ 100A, 10V
|
4V @ 250µA
|
74nC @ 10V
|
5270pF @ 50V
|
263W
|
Through Hole
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|