Manufacture :FAIRCHILD SEMICONDUCTOR CORP
25 mOhm @ 56A, 10V,Rds On (Max) @ Id, Vgs
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
HUF75639S3ST FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75639G3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Through Hole TO-247-3
HUF75639S3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
HUFA75639S3ST_F085A FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75639P3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Through Hole TO-220-3
HUFA75639S3ST FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 10V 2000pF @ 25V 200W - -
HUF75639S3S FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUFA75639P3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Through Hole TO-220-3
HUFA75639S3S FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUFA75639G3 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 100V 56A (Tc) 25 mOhm @ 56A, 10V 4V @ 250µA 130nC @ 20V 2000pF @ 25V 200W Through Hole TO-3P-3, SC-65-3