| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQB11P06TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 11.4A | 175 mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 3.13W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FQP11P06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 11.4A (Tc) | 175 mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 53W | Through Hole | TO-220-3 | |
| FQI11P06TU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 11.4A (Tc) | 175 mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 3.13W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA |
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