Manufacture :FAIRCHILD SEMICONDUCTOR CORP
600V,Drain to Source Voltage (Vdss)
74nC @ 10V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FCP25N60N_F102 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4V @ 250µA 74nC @ 10V 3352pF @ 100V 216W Through Hole TO-220-3
FCPF190N60 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 39W Through Hole TO-220-3 Full Pack
FCP190N60 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 208W Through Hole TO-220-3
FCPF190N60_F152 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20.2A 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 39W Through Hole TO-220-3 Full Pack
FCP190N60_GF102 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 208W Through Hole TO-220-3
FCH25N60N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 25A (Tc) 126 mOhm @ 12.5A, 10V 4V @ 250µA 74nC @ 10V 3352pF @ 100V 216W Through Hole TO-247-3
FCI25N60N_F102 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4V @ 250µA 74nC @ 10V 3352pF @ 100V 216W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FCI25N60N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4V @ 250µA 74nC @ 10V 3352pF @ 100V 216W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
FCP25N60N FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 25A (Tc) 125 mOhm @ 12.5A, 10V 4V @ 250µA 74nC @ 10V 3352pF @ 100V 216W Through Hole TO-220-3