Manufacture :FAIRCHILD SEMICONDUCTOR CORP
600V,Drain to Source Voltage (Vdss)
650 mOhm @ 6A, 10V,Rds On (Max) @ Id, Vgs
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDPF12N60NZ FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 5V @ 250µA 34nC @ 10V 1676pF @ 25V 39W Through Hole TO-220-3 Full Pack, Formed Leads
FDP12N60NZ FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 5V @ 250µA 34nC @ 10V 1676pF @ 25V 240W Through Hole TO-220-3 Full Pack
FQP12N60C FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 225W Through Hole TO-220-3
FQPF12N60C FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 51W Through Hole TO-220-3 Full Pack
FQPF12N60CT FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 51W Through Hole TO-220-3 Full Pack
FQB12N60CTM FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 3.13W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQI12N60CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 3.13W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA