Manufacture :FAIRCHILD SEMICONDUCTOR CORP
600V,Drain to Source Voltage (Vdss)
2.4A (Tc),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FQD3N60CTM_WS FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 2.4A (Tc) 3.4 Ohm @ 1.2A, 10V 4V @ 250µA 14nC @ 10V 565pF @ 25V 50W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQD3N60TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 2.4A (Tc) 3.6 Ohm @ 1.2A, 10V 5V @ 250µA 13nC @ 10V 450pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQU3N60TU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 2.4A (Tc) 3.6 Ohm @ 1.2A, 10V 5V @ 250µA 13nC @ 10V 450pF @ 25V 2.5W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
FQD3N60TF FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 2.4A (Tc) 3.6 Ohm @ 1.2A, 10V 5V @ 250µA 13nC @ 10V 450pF @ 25V 2.5W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FQP2N60 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 2.4A (Tc) 4.7 Ohm @ 1.2A, 10V 4V @ 250µA 11nC @ 10V 350pF @ 25V 64W Through Hole TO-220-3
FQB2N60TM FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 2.4A (Tc) 4.7 Ohm @ 1.2A, 10V 5V @ 250µA 11nC @ 10V 350pF @ 25V 3.13W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQU3N60CTU FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 2.4A (Tc) 3.4 Ohm @ 1.2A, 10V 4V @ 250µA 14nC @ 10V 565pF @ 25V 50W Through Hole TO-251-3 Short Leads, IPak, TO-251AA