EGP30G |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
400V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 400V
|
75pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP30A |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
50V
|
3A
|
950mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 50V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5402 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
200V
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 200V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5401 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
100V
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 100V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5408 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1000V (1kV)
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 1000V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5406 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 600V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5404 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
400V
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 400V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP30B |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
100V
|
3A
|
950mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 100V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP30F |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
300V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 300V
|
75pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP30C |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
150V
|
3A
|
950mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 150V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|