Manufacture :DIODES INC
2.6A (Ta),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP2225L-7 DIODES INC
MOSFET P-Channel, Metal Oxide 20V 2.6A (Ta) 110 mOhm @ 2.6A, 4.5V 1.25V @ 250µA 5.3nC @ 4.5V 250pF @ 10V 1.08W Surface Mount TO-236-3, SC-59, SOT-23-3
DMP1096UCB4-7 DIODES INC
MOSFET P-Channel, Metal Oxide 12V 2.6A (Ta) 102 mOhm @ 500mA, 4.5V 1V @ 250µA 3.7nC @ 4.5V 251pF @ 6V 820mW Surface Mount 4-UFBGA, CSPBGA
ZXMP7A17GTA DIODES INC
MOSFET P-Channel, Metal Oxide 70V 2.6A (Ta) 160 mOhm @ 2.1A, 10V 1V @ 250µA 18nC @ 10V 635pF @ 40V 2W Surface Mount TO-261-4, TO-261AA
ZXMP7A17GQTA DIODES INC
MOSFET P-Channel, Metal Oxide 70V 2.6A (Ta) 160 mOhm @ 2.1A, 10V 1V @ 250µA 18nC @ 10V 635pF @ 40V 2W Surface Mount TO-261-4, TO-261AA
ZXMC4559DN8TC DIODES INC
N and P-Channel Complementary 60V 2.6A (Ta) 55 mOhm @ 4.5A, 10V 1V @ 250µA 20.4nC @ 10V 1063pF @ 30V 1.8W Surface Mount 8-SOIC (0.154", 3.90mm Width)
ZXMP10A18GTA DIODES INC
MOSFET P-Channel, Metal Oxide 100V 2.6A (Ta) 150 mOhm @ 2.8A, 10V 4V @ 250µA 26.9nC @ 10V 1055pF @ 50V 2W Surface Mount TO-261-4, TO-261AA
HTMN5130SSD-13 DIODES INC
2 P-Channel (Dual) 55V 2.6A (Ta) 200 mOhm @ 3A, 10V 3V @ 250µA 8.9nC @ 10V 218.7pF @ 25V 1.7W Surface Mount 8-SOIC (0.154", 3.90mm Width)