Manufacture :DIODES INC
MOSFET P-Channel, Metal Oxide,FET Type
660mW,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP3028LFDE-7 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 6.8A (Ta) 32 mOhm @ 7A, 10V 2.4V @ 250µA 22nC @ 10V 1241pF @ 15V 660mW Surface Mount 6-UDFN Exposed Pad
DMP3028LFDE-13 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 6.8A (Ta) 32 mOhm @ 7A, 10V 2.4V @ 250µA 22nC @ 10V 1241pF @ 15V 660mW Surface Mount 6-UDFN Exposed Pad
DMP2066UFDE-7 DIODES INC
MOSFET P-Channel, Metal Oxide 20V 6.2A (Ta) 36 mOhm @ 4.6A, 4.5V 1.1V @ 250µA 14.4nC @ 4.5V 1537pF @ 10V 660mW Surface Mount 6-UDFN Exposed Pad
DMP1022UFDE-7 DIODES INC
MOSFET P-Channel, Metal Oxide 12V 9.1A (Ta) 16 mOhm @ 8.2A, 4.5V 800mV @ 250µA 42.6nC @ 5V 2953pF @ 4V 660mW Surface Mount 6-UDFN Exposed Pad