950mW,Power - Max
16 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
2SC6017-E ON SEMICONDUCTOR
NPN 10A 50V 360mV @ 250mA, 5A - 200 @ 1A, 2V / 30 @ 5mA, 5V 950mW 200MHz Through Hole TO-251-3 Short Leads, IPak, TO-251AA
2SC6017-TL-E ON SEMICONDUCTOR
NPN 10A 50V 360mV @ 250mA, 5A - 200 @ 1A, 2V 950mW 200MHz Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
2SA2169-E ON SEMICONDUCTOR
PNP 10A 50V 580mV @ 250mA, 5A - 200 @ 1A, 2V 950mW 130MHz Through Hole TO-251-3 Short Leads, IPak, TO-251AA
2SA2169-TL-E ON SEMICONDUCTOR
PNP 10A 50V 580mV @ 250mA, 5A - 200 @ 1A, 2V 950mW 130MHz Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STBV45G-AP STMICROELECTRONICS
NPN 750mA 400V 1.5V @ 135mA, 400mA 250µA 5 @ 400mA, 5V 950mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
STBV45-AP STMICROELECTRONICS
NPN 750mA 400V 1.5V @ 135mA, 400mA 250µA 5 @ 400mA, 5V 950mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
STBV45 STMICROELECTRONICS
NPN 750mA 400V 1.5V @ 135mA, 400mA 250µA 5 @ 400mA, 5V 950mW - Through Hole TO-226-3, TO-92-3 (TO-226AA)
STBV45G STMICROELECTRONICS
NPN 750mA 400V 1.5V @ 135mA, 400mA 250µA 5 @ 400mA, 5V 950mW - Through Hole TO-226-3, TO-92-3 (TO-226AA)
ULQ2004ATDRG4Q1 TEXAS INSTRUMENTS INC
7 NPN Darlington 500mA 50V 1.6V @ 500µA, 350mA - - 950mW - Surface Mount 16-SOIC (0.154", 3.90mm Width)
ULQ2003ATDRG4Q1 TEXAS INSTRUMENTS INC
7 NPN Darlington 500mA 50V 1.7V @ 500µA, 350mA - - 950mW - Surface Mount 16-SOIC (0.154", 3.90mm Width)