338mW,Power - Max
23 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
MUN2211T1G ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 35 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2211T1 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 35 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2212T1 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 60 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2213T1 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 80 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2214T1 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 80 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2241T1 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 5mA, 10mA 500nA 160 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2236T1 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 80 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2211T3 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 35 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2213JT1 ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 80 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2213JT1G ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 300µA, 10mA 500nA 80 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3