40 @ 50mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
13 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
MPSL51 FAIRCHILD SEMICONDUCTOR CORP
PNP 200mA 100V 300mV @ 5mA, 50mA - 40 @ 50mA, 5V 625mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
MPSL51_D26Z FAIRCHILD SEMICONDUCTOR CORP
PNP 200mA 100V 300mV @ 5mA, 50mA - 40 @ 50mA, 5V 625mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
MPSL51_D27Z FAIRCHILD SEMICONDUCTOR CORP
PNP 200mA 100V 300mV @ 5mA, 50mA - 40 @ 50mA, 5V 625mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
MPSL51_D75Z FAIRCHILD SEMICONDUCTOR CORP
PNP 200mA 100V 300mV @ 5mA, 50mA - 40 @ 50mA, 5V 625mW 60MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BCR 503 B6327 INFINEON TECHNOLOGIES AG
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA - 40 @ 50mA, 5V 330mW 100MHz Surface Mount TO-236-3, SC-59, SOT-23-3
BCR 503 E6327 INFINEON TECHNOLOGIES AG
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA - 40 @ 50mA, 5V 330mW 100MHz Surface Mount TO-236-3, SC-59, SOT-23-3
BCR 553 E6327 INFINEON TECHNOLOGIES AG
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA - 40 @ 50mA, 5V 330mW 150MHz Surface Mount TO-236-3, SC-59, SOT-23-3
PDTB123ES,126 NXP SEMICONDUCTORS
PNP - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 40 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTD123ES,126 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 40 @ 50mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTD123EK,115 NXP SEMICONDUCTORS
NPN - Pre-Biased 500mA 50V 300mV @ 2.5mA, 50mA 500nA 40 @ 50mA, 5V 250mW - Surface Mount TO-236-3, SC-59, SOT-23-3