40 @ 500mA, 1V,DC Current Gain (hFE) (Min) @ Ic, Vce
17 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BD442STU FAIRCHILD SEMICONDUCTOR CORP
PNP 4A 80V 800mV @ 200mA, 2A 100µA 40 @ 500mA, 1V 36W 3MHz Through Hole TO-225AA, TO-126-3
BD440S FAIRCHILD SEMICONDUCTOR CORP
PNP 4A 60V 800mV @ 200mA, 2A 100µA 40 @ 500mA, 1V 36W 3MHz Through Hole TO-225AA, TO-126-3
BD439G ON SEMICONDUCTOR
NPN 4A 60V 800mV @ 300mA, 3A - 40 @ 500mA, 1V 36W 3MHz Through Hole TO-225AA, TO-126-3
BD441G ON SEMICONDUCTOR
NPN 4A 80V 800mV @ 300mA, 3A - 40 @ 500mA, 1V 36W 3MHz Through Hole TO-225AA, TO-126-3
BD441STU FAIRCHILD SEMICONDUCTOR CORP
NPN 4A 80V 800mV @ 200mA, 2A 100µA 40 @ 500mA, 1V 36W 3MHz Through Hole TO-225AA, TO-126-3
BD442S FAIRCHILD SEMICONDUCTOR CORP
PNP 4A 80V 800mV @ 200mA, 2A 100µA 40 @ 500mA, 1V 36W 3MHz Through Hole TO-225AA, TO-126-3
JANTX2N3467 MICROSEMI CORP
PNP 1A 40V 1.2V @ 100mA, 1A - 40 @ 500mA, 1V 1W 500MHz Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N3735 MICROSEMI CORP
NPN 1.5A 40V 900mV @ 100mA, 1A 10µA (ICBO) 40 @ 500mA, 1V 1W - Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N3735L MICROSEMI CORP
NPN 1.5A 40V 900mV @ 100mA, 1A 10µA (ICBO) 40 @ 500mA, 1V 1W - Through Hole TO-205AA, TO-5-3 Metal Can
BD440G ON SEMICONDUCTOR
PNP 4A 60V 800mV @ 300mA, 3A - 40 @ 500mA, 1V 36W 3MHz Through Hole TO-225AA, TO-126-3