40 @ 10mA, 350mV,DC Current Gain (hFE) (Min) @ Ic, Vce
5 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
MMBT2369LT1G ON SEMICONDUCTOR
NPN 200mA 15V 250mV @ 1mA, 10mA - 40 @ 10mA, 350mV 225mW - Surface Mount TO-236-3, SC-59, SOT-23-3
2N5769 FAIRCHILD SEMICONDUCTOR CORP
NPN 200mA 15V 500mV @ 10mA, 100mA 400µA 40 @ 10mA, 350mV 350mW - Through Hole TO-226-3, TO-92-3 (TO-226AA)
PN2369A,126 NXP SEMICONDUCTORS
NPN 200mA 15V 500mV @ 10mA, 100mA - 40 @ 10mA, 350mV 500mW 500MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
MMBT2369LT3G ON SEMICONDUCTOR
NPN 200mA 15V 250mV @ 1mA, 10mA - 40 @ 10mA, 350mV 225mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MMBT2369LT1 ON SEMICONDUCTOR
NPN 200mA 15V 250mV @ 1mA, 10mA - 40 @ 10mA, 350mV 225mW - Surface Mount TO-236-3, SC-59, SOT-23-3