300 @ 1mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
17 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PBSS5240XF NXP SEMICONDUCTORS
PNP 2A 40V 140mV @ 5mA, 100mA 100nA (ICBO) 300 @ 1mA, 5V 500mW 150MHz Surface Mount TO-243AA
JAN2N3811 MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - Through Hole TO-78-6 Metal Can
JANTX2N3811 MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - Through Hole TO-78-6 Metal Can
JAN2N3811L MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - Through Hole TO-78-6 Metal Can
JANTXV2N3811 MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - - -
JANTX2N3811U MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - Through Hole TO-78-6 Metal Can
JANTX2N3811L MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - Through Hole TO-78-6 Metal Can
JANTXV2N3811U MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - - -
JANTXV2N3811L MICROSEMI CORP
2 PNP (Dual) 50mA 60V 250mV @ 100µA, 1mA 10µA (ICBO) 300 @ 1mA, 5V 350mW - - -
RN1110CT(TPL3) TOSHIBA CORP
NPN - Pre-Biased 50mA 20V 150mV @ 250µA, 5mA 100nA (ICBO) 300 @ 1mA, 5V 50mW - Surface Mount SC-101, SOT-883