Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

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100 @ 100mA, 1V,DC Current Gain (hFE) (Min) @ Ic, Vce

210MHz,Frequency - Transition

10 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

BC337RL1G ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337-016G ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

BC337-16RL1 ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337-16RL1G ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337-16ZL1 ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337-16ZL1G ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337RL1 ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337ZL1 ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337ZL1G ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC337G ON SEMICONDUCTOR

NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
BC337RL1G	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-016G	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
BC337-16RL1	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-16RL1G	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-16ZL1	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-16ZL1G	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337RL1	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337ZL1	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337ZL1G	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337G	ON SEMICONDUCTOR	NPN	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	210MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)

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