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Home Category Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
10nA,Current - Collector Cutoff (Max)
200MHz,Frequency - Transition
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
P2N2907A ON SEMICONDUCTOR
PNP 600mA 60V 1.6V @ 50mA, 500mA 10nA 100 @ 150mA, 10V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
P2N2907AG ON SEMICONDUCTOR
PNP 600mA 60V 1.6V @ 50mA, 500mA 10nA 100 @ 150mA, 10V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
P2N2907ARL1 ON SEMICONDUCTOR
PNP 600mA 60V 1.6V @ 50mA, 500mA 10nA 100 @ 150mA, 10V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
P2N2907ARL1G ON SEMICONDUCTOR
PNP 600mA 60V 1.6V @ 50mA, 500mA 10nA 100 @ 150mA, 10V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
P2N2907AZL1 ON SEMICONDUCTOR
PNP 600mA 60V 1.6V @ 50mA, 500mA 10nA 100 @ 150mA, 10V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
P2N2907AZL1G ON SEMICONDUCTOR
PNP 600mA 60V 1.6V @ 50mA, 500mA 10nA 100 @ 150mA, 10V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BCY59IX STMICROELECTRONICS
NPN 200mA 45V 700mV @ 2.5mA, 100mA 10nA 180 @ 2mA, 5V 390mW 200MHz Through Hole TO-206AA, TO-18-3 Metal Can
BCY59VIII STMICROELECTRONICS
NPN 200mA 45V 700mV @ 2.5mA, 100mA 10nA 180 @ 2mA, 5V 390mW 200MHz Through Hole TO-206AA, TO-18-3 Metal Can
BCY59X STMICROELECTRONICS
NPN 200mA 45V 700mV @ 2.5mA, 100mA 10nA 180 @ 2mA, 5V 390mW 200MHz Through Hole TO-206AA, TO-18-3 Metal Can


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