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Home Category Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
100nA,Current - Collector Cutoff (Max)
210MHz,Frequency - Transition
25 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PBSS4330PA,115 NXP SEMICONDUCTORS
NPN 3A 30V 300mV @ 300mA, 3A 100nA 270 @ 1A, 2V 2.1W 210MHz Surface Mount 3-UDFN Exposed Pad
PBSS4220V,115 NXP SEMICONDUCTORS
NPN 2A 20V 350mV @ 200mA, 2A 100nA 200 @ 1A, 2V 900mW 210MHz Surface Mount SOT-563, SOT-666
BC337-025G ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 160 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC337-040G ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 250 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC337RL1G ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-016G ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC337-025 ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 160 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC337-040 ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 250 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC337-16RL1 ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC337-16RL1G ON SEMICONDUCTOR
NPN 800mA 45V 700mV @ 50mA, 500mA 100nA 100 @ 100mA, 1V 625mW 210MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads


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