Transistors Bipolar(BJT) Pre-biased, Single & Arrays| Component Buy

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1µA,Current - Collector Cutoff (Max)

500mW,Power - Max

45 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

KSA992FBU FAIRCHILD SEMICONDUCTOR CORP

PNP 50mA 120V 300mV @ 1mA, 10mA 1µA 300 @ 1mA, 6V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

KSA992FATA FAIRCHILD SEMICONDUCTOR CORP

PNP 50mA 120V 300mV @ 1mA, 10mA 1µA 200 @ 1mA, 6V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

KSA992FBTA FAIRCHILD SEMICONDUCTOR CORP

PNP 50mA 120V 300mV @ 1mA, 10mA 1µA 200 @ 1mA, 6V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

KSA992FTA FAIRCHILD SEMICONDUCTOR CORP

PNP 50mA 120V 300mV @ 1mA, 10mA 1µA 300 @ 1mA, 6V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

KSA992PBU FAIRCHILD SEMICONDUCTOR CORP

PNP 50mA 120V 300mV @ 1mA, 10mA 1µA 200 @ 1mA, 6V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

KSA992PTA FAIRCHILD SEMICONDUCTOR CORP

PNP 50mA 120V 300mV @ 1mA, 10mA 1µA 200 @ 1mA, 6V 500mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTA114ES,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 30 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTA114TS,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 200 @ 1mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTA124ES,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 60 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

PDTA144ES,126 NXP SEMICONDUCTORS

PNP - Pre-Biased 100mA 50V 150mV @ 500µA, 10mA 1µA 80 @ 5mA, 5V 500mW - Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
KSA992FBU	FAIRCHILD SEMICONDUCTOR CORP	PNP	50mA	120V	300mV @ 1mA, 10mA	1µA	300 @ 1mA, 6V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
KSA992FATA	FAIRCHILD SEMICONDUCTOR CORP	PNP	50mA	120V	300mV @ 1mA, 10mA	1µA	200 @ 1mA, 6V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
KSA992FBTA	FAIRCHILD SEMICONDUCTOR CORP	PNP	50mA	120V	300mV @ 1mA, 10mA	1µA	200 @ 1mA, 6V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
KSA992FTA	FAIRCHILD SEMICONDUCTOR CORP	PNP	50mA	120V	300mV @ 1mA, 10mA	1µA	300 @ 1mA, 6V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
KSA992PBU	FAIRCHILD SEMICONDUCTOR CORP	PNP	50mA	120V	300mV @ 1mA, 10mA	1µA	200 @ 1mA, 6V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)
KSA992PTA	FAIRCHILD SEMICONDUCTOR CORP	PNP	50mA	120V	300mV @ 1mA, 10mA	1µA	200 @ 1mA, 6V	500mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA114ES,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	30 @ 5mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA114TS,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	200 @ 1mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA124ES,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	60 @ 5mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PDTA144ES,126	NXP SEMICONDUCTORS	PNP - Pre-Biased	100mA	50V	150mV @ 500µA, 10mA	1µA	80 @ 5mA, 5V	500mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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