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500mV @ 50mA, 500mA,Vce Saturation (Max) @ Ib, Ic

830mW,Power - Max

13 parts found

Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case

BC635,116 NXP SEMICONDUCTORS

NPN 1A 45V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC635-16,126 NXP SEMICONDUCTORS

NPN 1A 45V 500mV @ 50mA, 500mA - 100 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC636,116 NXP SEMICONDUCTORS

PNP 1A 45V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 145MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC638,126 NXP SEMICONDUCTORS

PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC638,116 NXP SEMICONDUCTORS

PNP 1A 60V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC639,126 NXP SEMICONDUCTORS

NPN 1A 80V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC639,116 NXP SEMICONDUCTORS

NPN 1A 80V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC640,126 NXP SEMICONDUCTORS

PNP 1A 80V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 145MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC640,116 NXP SEMICONDUCTORS

PNP 1A 80V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 145MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads

BC635,112 NXP SEMICONDUCTORS

NPN 1A 45V 500mV @ 50mA, 500mA - 63 @ 150mA, 2V 830mW 180MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)

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Part Numbers	Manufacturer Name	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Mounting Type	Package / Case
BC635,116	NXP SEMICONDUCTORS	NPN	1A	45V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	180MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC635-16,126	NXP SEMICONDUCTORS	NPN	1A	45V	500mV @ 50mA, 500mA	-	100 @ 150mA, 2V	830mW	180MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC636,116	NXP SEMICONDUCTORS	PNP	1A	45V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	145MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC638,126	NXP SEMICONDUCTORS	PNP	1A	60V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC638,116	NXP SEMICONDUCTORS	PNP	1A	60V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	100MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC639,126	NXP SEMICONDUCTORS	NPN	1A	80V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	180MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC639,116	NXP SEMICONDUCTORS	NPN	1A	80V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	180MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC640,126	NXP SEMICONDUCTORS	PNP	1A	80V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	145MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC640,116	NXP SEMICONDUCTORS	PNP	1A	80V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	145MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC635,112	NXP SEMICONDUCTORS	NPN	1A	45V	500mV @ 50mA, 500mA	-	63 @ 150mA, 2V	830mW	180MHz	Through Hole	TO-226-3, TO-92-3 (TO-226AA)

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