500mV @ 50mA, 500mA,Vce Saturation (Max) @ Ib, Ic
800mW,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
2N3019S MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 80V 500mV @ 50mA, 500mA 10µA (ICBO) 50 @ 500mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
2N3019 MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 1A 80V 500mV @ 50mA, 500mA 10µA (ICBO) 50 @ 500mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can
JAN2N3019S MICROSEMI CORP
NPN 1A 80V 500mV @ 50mA, 500mA 100nA 50 @ 500mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N3019 MICROSEMI CORP
NPN 1A 80V 500mV @ 50mA, 500mA 100nA 50 @ 500mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JANTXV2N3019S MICROSEMI CORP
NPN 1A 80V 500mV @ 50mA, 500mA 10µA (ICBO) 50 @ 500mA, 10V 800mW - - -
JANTXV2N3019 MICROSEMI CORP
NPN 1A 80V 500mV @ 50mA, 500mA 10µA (ICBO) 50 @ 500mA, 10V 800mW - - -
2N4033 STMICROELECTRONICS
PNP 1A 80V 500mV @ 50mA, 500mA - 100 @ 100mA, 5V 800mW 500MHz Through Hole TO-205AD, TO-39-3 Metal Can
2N3019 STMICROELECTRONICS
NPN 1A 80V 500mV @ 50mA, 500mA - 100 @ 150mA, 10V 800mW 100MHz Through Hole TO-205AD, TO-39-3 Metal Can