320mV @ 100mA, 1A,Vce Saturation (Max) @ Ib, Ic
830mW,Power - Max
2 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PBSS9110AS,126 NXP SEMICONDUCTORS
PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PBSS9110S,126 NXP SEMICONDUCTORS
PNP 1A 100V 320mV @ 100mA, 1A 100nA 150 @ 500mA, 5V 830mW 100MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads