250mV @ 500µA, 10mA,Vce Saturation (Max) @ Ib, Ic
200 @ 2mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
625mW,Power - Max
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BC547BG ON SEMICONDUCTOR
NPN 100mA 45V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC548BG ON SEMICONDUCTOR
NPN 100mA 30V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC547B ON SEMICONDUCTOR
NPN 100mA 45V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC546BZL1 ON SEMICONDUCTOR
NPN 100mA 65V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC547BRL1 ON SEMICONDUCTOR
NPN 100mA 45V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC547BZL1 ON SEMICONDUCTOR
NPN 100mA 45V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC548BRL1 ON SEMICONDUCTOR
NPN 100mA 30V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC548BZL1 ON SEMICONDUCTOR
NPN 100mA 30V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC548B ON SEMICONDUCTOR
NPN 100mA 30V 250mV @ 500µA, 10mA 15nA 200 @ 2mA, 5V 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)