250mV @ 1mA, 10mA,Vce Saturation (Max) @ Ib, Ic
500mW,Power - Max
29 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
NSBC114TDXV6T1G ON SEMICONDUCTOR
2 NPN - Pre-Biased (Dual) 100mA 50V 250mV @ 1mA, 10mA 500nA 160 @ 5mA, 10V 500mW - Surface Mount SOT-563, SOT-666
NSBC143ZDXV6T1G ON SEMICONDUCTOR
2 NPN - Pre-Biased (Dual) 100mA 50V 250mV @ 1mA, 10mA 500nA 80 @ 5mA, 10V 500mW - Surface Mount SOT-563, SOT-666
NSBC143ZPDXV6T1G ON SEMICONDUCTOR
1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 250mV @ 1mA, 10mA 500nA 80 @ 5mA, 10V 500mW - Surface Mount SOT-563, SOT-666
PH2369,112 NXP SEMICONDUCTORS
NPN 200mA 15V 250mV @ 1mA, 10mA - 40 @ 10mA, 1V 500mW 500MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
PH2369,126 NXP SEMICONDUCTORS
NPN 200mA 15V 250mV @ 1mA, 10mA - 40 @ 10mA, 1V 500mW 500MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PH2369,116 NXP SEMICONDUCTORS
NPN 200mA 15V 250mV @ 1mA, 10mA - 40 @ 10mA, 1V 500mW 500MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
NSBC114TDXV6T5G ON SEMICONDUCTOR
2 NPN - Pre-Biased (Dual) 100mA 50V 250mV @ 1mA, 10mA 500nA 160 @ 5mA, 10V 500mW - Surface Mount SOT-563, SOT-666
NSBC143ZDXV6T1 ON SEMICONDUCTOR
2 NPN - Pre-Biased (Dual) 100mA 50V 250mV @ 1mA, 10mA 500nA 80 @ 5mA, 10V 500mW - Surface Mount SOT-563, SOT-666
NSBC143ZPDXV6T5 ON SEMICONDUCTOR
1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 250mV @ 1mA, 10mA 500nA 80 @ 5mA, 10V 500mW - Surface Mount SOT-563, SOT-666
NSBC143TDXV6T1 ON SEMICONDUCTOR
2 NPN - Pre-Biased (Dual) 100mA 50V 250mV @ 1mA, 10mA 500nA 160 @ 5mA, 10V 500mW - Surface Mount SOT-563, SOT-666