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Home Category Discrete Semiconductor Products Transistors Bipolar(BJT) Pre-biased, Single & Arrays
250mV @ 1mA, 10mA,Vce Saturation (Max) @ Ib, Ic
338mW,Power - Max
5 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
MUN2232T1G ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 1mA, 10mA 500nA 15 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2215T1G ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 1mA, 10mA 500nA 160 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2216T1G ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 1mA, 10mA 500nA 160 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2240T1G ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 1mA, 10mA 500nA 160 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3
MUN2234T1G ON SEMICONDUCTOR
NPN - Pre-Biased 100mA 50V 250mV @ 1mA, 10mA 500nA 80 @ 5mA, 10V 338mW - Surface Mount TO-236-3, SC-59, SOT-23-3


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