1V @ 50mA, 500mA,Vce Saturation (Max) @ Ib, Ic
100 @ 150mA, 10mV,DC Current Gain (hFE) (Min) @ Ic, Vce
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
MMBT2222A-G COMCHIP TECHNOLOGY CORP
NPN 600mA 40V 1V @ 50mA, 500mA - 100 @ 150mA, 10mV 225mW 300MHz Surface Mount TO-236-3, SC-59, SOT-23-3
KSP2222ATF FAIRCHILD SEMICONDUCTOR CORP
NPN 600mA 40V 1V @ 50mA, 500mA - 100 @ 150mA, 10mV 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PN2222TA FAIRCHILD SEMICONDUCTOR CORP
NPN 600mA 30V 1V @ 50mA, 500mA - 100 @ 150mA, 10mV 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
PN2222TF FAIRCHILD SEMICONDUCTOR CORP
NPN 600mA 30V 1V @ 50mA, 500mA - 100 @ 150mA, 10mV 625mW 300MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N2219A MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 800mA 50V 1V @ 50mA, 500mA 10µA (ICBO) 100 @ 150mA, 10mV 800mW 250MHz Through Hole TO-205AD, TO-39-3 Metal Can
2N2219AL MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 800mA 50V 1V @ 50mA, 500mA 10µA (ICBO) 100 @ 150mA, 10mV 800mW 250MHz Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N5582 MICROSEMI CORP
NPN 800mA 50V 1V @ 50mA, 500mA 100µA (ICBO) 100 @ 150mA, 10mV 500mW - Through Hole TO-206AB, TO-46-3 Metal Can
JANTXV2N5582 MICROSEMI CORP
NPN 800mA 50V 1V @ 50mA, 500mA 100µA (ICBO) 100 @ 150mA, 10mV 500mW - Through Hole TO-206AB, TO-46-3 Metal Can
JANTX2N2222AUA MICROSEMI CORP
NPN 800mA 50V 1V @ 50mA, 500mA 10µA (ICBO) 100 @ 150mA, 10mV 500mW - Through Hole TO-206AA, TO-18-3 Metal Can