1.1V @ 250µA, 250mA,Vce Saturation (Max) @ Ib, Ic
8 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BC372 ON SEMICONDUCTOR
NPN - Darlington 1A 100V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC372G ON SEMICONDUCTOR
NPN - Darlington 1A 100V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC373 ON SEMICONDUCTOR
NPN - Darlington 1A 80V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC373G ON SEMICONDUCTOR
NPN - Darlington 1A 80V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
BC373RL1 ON SEMICONDUCTOR
NPN - Darlington 1A 80V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC373ZL1 ON SEMICONDUCTOR
NPN - Darlington 1A 80V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC373ZL1G ON SEMICONDUCTOR
NPN - Darlington 1A 80V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC373RL1G ON SEMICONDUCTOR
NPN - Darlington 1A 80V 1.1V @ 250µA, 250mA - 10000 @ 100mA, 5V 625mW 200MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads