60V,Voltage - Collector Emitter Breakdown (Max)
175MHz,Frequency - Transition
11 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
FZT651TA DIODES INC
NPN 3A 60V 600mV @ 300mA, 3A - 100 @ 500mA, 2V 2W 175MHz Surface Mount TO-261-4, TO-261AA
ZTX651STZ DIODES INC
NPN 2A 60V 500mV @ 200mA, 2A 10µA (ICBO) - 1W 175MHz Through Hole E-Line-3, Formed Leads
ZTX651 DIODES INC
NPN 2A 60V 500mV @ 200mA, 2A - - 1W 175MHz Through Hole E-Line-3
PBSS4160PAN,115 NXP SEMICONDUCTORS
2 NPN (Dual) 1A 60V 120mV @ 50mA, 500mA 100nA (ICBO) 150 @ 500mA, 2V 510mW 175MHz Surface Mount 6-UDFN Exposed Pad
ZDT651TA DIODES INC
2 NPN (Dual) 2A 60V 500mV @ 200mA, 2A - 100 @ 500mA, 2V 2.75W 175MHz Surface Mount SOT-223-8
ZDT651TC DIODES INC
2 NPN (Dual) 2A 60V 500mV @ 200mA, 2A - 100 @ 500mA, 2V 2.75W 175MHz Surface Mount SOT-223-8
FZT651TC DIODES INC
NPN 3A 60V 600mV @ 300mA, 3A - 100 @ 500mA, 2V 2W 175MHz Surface Mount TO-261-4, TO-261AA
ZTX651STOA DIODES INC
NPN 2A 60V 500mV @ 200mA, 2A - - 1W 175MHz Through Hole E-Line-3, Formed Leads
ZTX651STOB DIODES INC
NPN 2A 60V 500mV @ 200mA, 2A - - 1W 175MHz Through Hole E-Line-3, Formed Leads
PBSS4160PANP,115 NXP SEMICONDUCTORS
NPN, PNP 1A 60V 120mV @ 50mA, 500mA 100nA (ICBO) 150 @ 500mA, 2V 510mW 175MHz Surface Mount 6-UDFN Exposed Pad