60V,Voltage - Collector Emitter Breakdown (Max)
2000 @ 500mA, 10V,DC Current Gain (hFE) (Min) @ Ic, Vce
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BST61,115 NXP SEMICONDUCTORS
PNP - Darlington 1A 60V 1.3V @ 500µA, 500mA 50nA 2000 @ 500mA, 10V 1.3W 200MHz Surface Mount TO-243AA
BST51,135 NXP SEMICONDUCTORS
NPN - Darlington 1A 60V 1.3V @ 500µA, 500mA 50nA 2000 @ 500mA, 10V 1.3W 200MHz Surface Mount TO-243AA
BSP51,115 NXP SEMICONDUCTORS
NPN - Darlington 1A 60V 1.3V @ 500µA, 500mA 50nA 2000 @ 500mA, 10V 1.25W 200MHz Surface Mount TO-261-4, TO-261AA
BSP61,115 NXP SEMICONDUCTORS
PNP - Darlington 1A 60V 1.3V @ 500µA, 500mA 50nA 2000 @ 500mA, 10V 1.25W 200MHz Surface Mount TO-261-4, TO-261AA
BST51,115 NXP SEMICONDUCTORS
NPN - Darlington 1A 60V 1.3V @ 500µA, 500mA 50nA 2000 @ 500mA, 10V 1.3W 200MHz Surface Mount TO-243AA
BSP 51 E6327 INFINEON TECHNOLOGIES AG
NPN - Darlington 1A 60V 1.8V @ 1mA, 1A 10µA 2000 @ 500mA, 10V 1.5W 200MHz Surface Mount TO-261-4, TO-261AA
BSP 61 E6327 INFINEON TECHNOLOGIES AG
PNP - Darlington 1A 60V 1.8V @ 1mA, 1A 10µA 2000 @ 500mA, 10V 1.5W 200MHz Surface Mount TO-261-4, TO-261AA
BSP 51 H6327 INFINEON TECHNOLOGIES AG
NPN - Darlington 1A 60V 1.8V @ 1mA, 1A 10µA 2000 @ 500mA, 10V 1.5W 200MHz Surface Mount TO-261-4, TO-261AA
BSP 61 H6327 INFINEON TECHNOLOGIES AG
PNP - Darlington 1A 60V 1.8V @ 1mA, 1A 10µA 2000 @ 500mA, 10V 1.5W 200MHz Surface Mount TO-261-4, TO-261AA