60V,Voltage - Collector Emitter Breakdown (Max)
120 @ 1A, 2V,DC Current Gain (hFE) (Min) @ Ic, Vce
14 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
DSS60600MZ4-13 DIODES INC
PNP 6A 60V 350mV @ 600mA, 6A - 120 @ 1A, 2V 1.2W 100MHz Surface Mount TO-261-4, TO-261AA
DSS60601MZ4-13 DIODES INC
NPN 6A 60V 300mV @ 600mA, 6A - 120 @ 1A, 2V 1.2W 100MHz Surface Mount TO-261-4, TO-261AA
PBSS4260PAN,115 NXP SEMICONDUCTORS
2 NPN (Dual) 2A 60V 90mV @ 50mA, 500mA 100nA (ICBO) 120 @ 1A, 2V 510mW 140MHz Surface Mount 6-UDFN Exposed Pad
PBSS4260PANP,115 NXP SEMICONDUCTORS
NPN, PNP 2A 60V 90mV @ 50mA, 500mA 100nA (ICBO) 120 @ 1A, 2V 510mW 140MHz Surface Mount 6-UDFN Exposed Pad
NSS60600MZ4T1G ON SEMICONDUCTOR
PNP 6A 60V 350mV @ 600mA, 6A - 120 @ 1A, 2V 800mW 100MHz Surface Mount TO-261-4, TO-261AA
NSS60600MZ4T3G ON SEMICONDUCTOR
PNP 6A 60V 350mV @ 600mA, 6A - 120 @ 1A, 2V 800mW 100MHz Surface Mount TO-261-4, TO-261AA
NSS60601MZ4T3G ON SEMICONDUCTOR
NPN 6A 60V 300mV @ 600mA, 6A - 120 @ 1A, 2V 800mW 100MHz Surface Mount TO-261-4, TO-261AA
NSV60600MZ4T1G ON SEMICONDUCTOR
PNP 6A 60V 350mV @ 600mA, 6A - 120 @ 1A, 2V 800mW 100MHz Surface Mount TO-261-4, TO-261AA
NSV60601MZ4T1G ON SEMICONDUCTOR
NPN 6A 60V 300mV @ 600mA, 6A - 120 @ 1A, 2V 800mW 100MHz Surface Mount TO-261-4, TO-261AA
NSV60600MZ4T3G ON SEMICONDUCTOR
PNP 6A 60V 350mV @ 600mA, 6A - 120 @ 1A, 2V 800mW 100MHz Surface Mount TO-261-4, TO-261AA