35V,Voltage - Collector Emitter Breakdown (Max)
18 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
FJMA790 FAIRCHILD SEMICONDUCTOR CORP
PNP 2A 35V 450mV @ 50mA, 2A - 100 @ 1.5A, 1.5V 1.56W - Surface Mount 6-WDFN Exposed Pad
MBT35200MT1G ON SEMICONDUCTOR
PNP 2A 35V 310mV @ 20mA, 2A 100nA 100 @ 1.5A, 1.5V 625mW 100MHz Surface Mount SC-74, SOT-457
ZTX749A FAIRCHILD SEMICONDUCTOR CORP
PNP 2A 35V 500mV @ 200mA, 2A - 100 @ 1A, 2V 1W 100MHz Through Hole E-Line-3
ZTX749A_D26Z FAIRCHILD SEMICONDUCTOR CORP
PNP 2A 35V 500mV @ 200mA, 2A - 100 @ 1A, 2V 1W 100MHz Through Hole E-Line-3, Formed Leads
ZTX749A_J05Z FAIRCHILD SEMICONDUCTOR CORP
PNP 2A 35V 500mV @ 200mA, 2A - 100 @ 1A, 2V 1W 100MHz Through Hole E-Line-3
ZTX749A_J61Z FAIRCHILD SEMICONDUCTOR CORP
PNP 2A 35V 500mV @ 200mA, 2A - 100 @ 1A, 2V 1W 100MHz Through Hole E-Line-3
2N2946A MICROSEMI COMMERCIAL BUSINESS UNIT
PNP 100mA 35V - 10µA (ICBO) 50 @ 1mA, 500mV 400mW - Through Hole TO-46-3
JAN2N2946A MICROSEMI CORP
PNP 100mA 35V - 10µA (ICBO) 50 @ 1mA, 500mV 400mW - - -
JANTXV2N2946A MICROSEMI CORP
PNP 100mA 35V - 10µA (ICBO) 50 @ 1mA, 500mV 400mW - - -
MBT35200MT2G ON SEMICONDUCTOR
PNP 2A 35V 310mV @ 20mA, 2A 100nA 100 @ 1.5A, 1.5V 625mW 100MHz Surface Mount SC-74, SOT-457