30V,Voltage - Collector Emitter Breakdown (Max)
510mW,Power - Max
6 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PBSS4130PAN,115 NXP SEMICONDUCTORS
2 NPN (Dual) 1A 30V 100mV @ 50mA, 500mA 100nA (ICBO) 210 @ 500mA, 2V 510mW 165MHz Surface Mount 6-UDFN Exposed Pad
PBSS5130PAP,115 NXP SEMICONDUCTORS
2 PNP (Dual) 1A 30V 280mV @ 50mA, 1A 100nA (ICBO) 170 @ 500mA, 2V 510mW 125MHz Surface Mount 6-UDFN Exposed Pad
PBSS4130PANP,115 NXP SEMICONDUCTORS
NPN, PNP 1A 30V 100mV @ 50mA, 500mA 100nA (ICBO) 210 @ 500mA, 2V 510mW 165MHz Surface Mount 6-UDFN Exposed Pad
PBSS4230PANP,115 NXP SEMICONDUCTORS
NPN, PNP 2A 30V 290mV @ 200mA, 2A 100nA (ICBO) 200 @ 1A, 2V 510mW 120MHz Surface Mount 6-UDFN Exposed Pad
PBSS4230PAN,115 NXP SEMICONDUCTORS
- 2A 30V 290mV @ 200mA, 2A 100nA (ICBO) 200 @ 1A, 2V 510mW 120MHz Surface Mount 6-UDFN Exposed Pad
PBSS5230PAP,115 NXP SEMICONDUCTORS
2 PNP (Dual) 2A 30V 420mv @ 100mA, 2A 100nA (ICBO) 160 @ 1A, 2V 510mW 95MHz Surface Mount 6-UDFN Exposed Pad