30V,Voltage - Collector Emitter Breakdown (Max)
200 @ 100mA, 1V,DC Current Gain (hFE) (Min) @ Ic, Vce
9 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
KSD471AGTA FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 30V 500mV @ 100mA, 1A - 200 @ 100mA, 1V 800mW 130MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
KSD471ACGTA FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 30V 500mV @ 100mA, 1A - 200 @ 100mA, 1V 800mW 130MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
KSD1021GBU FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 30V 500mV @ 100mA, 1A - 200 @ 100mA, 1V 350mW 130MHz Through Hole TO-226-3, TO-92-3 Short Body
KSD1021GTA FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 30V 500mV @ 100mA, 1A - 200 @ 100mA, 1V 350mW 130MHz Through Hole TO-226-3, TO-92-3 Short Body Formed Leads
KSD471AGBU FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 30V 500mV @ 100mA, 1A - 200 @ 100mA, 1V 800mW 130MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
KSD471ACGBU FAIRCHILD SEMICONDUCTOR CORP
NPN 1A 30V 500mV @ 100mA, 1A - 200 @ 100mA, 1V 800mW 130MHz Through Hole TO-226-3, TO-92-3 (TO-226AA)
2SC2859-GR(TE85L,F TOSHIBA CORP
NPN 500mA 30V 250mV @ 10mA, 100mA 100nA (ICBO) 200 @ 100mA, 1V 150mW 300MHz Surface Mount TO-236-3, SC-59, SOT-23-3
2SA1182-GR(TE85L,F TOSHIBA CORP
PNP 500mA 30V 250mV @ 10mA, 100mA 100nA (ICBO) 200 @ 100mA, 1V 150mW 200MHz Surface Mount TO-236-3, SC-59, SOT-23-3
2SA1588-GR(TE85L,F TOSHIBA CORP
PNP 500mA 30V 250mV @ 10mA, 100mA 100nA (ICBO) 200 @ 100mA, 1V 100mW 200MHz Surface Mount SC-70, SOT-323