30V,Voltage - Collector Emitter Breakdown (Max)
180 @ 2mA, 5V,DC Current Gain (hFE) (Min) @ Ic, Vce
6 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
BC558BRL ON SEMICONDUCTOR
PNP 100mA 30V 650mV @ 5mA, 100mA 100nA 180 @ 2mA, 5V 625mW 360MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC558BRL1 ON SEMICONDUCTOR
PNP 100mA 30V 650mV @ 5mA, 100mA 100nA 180 @ 2mA, 5V 625mW 360MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC558BRL1G ON SEMICONDUCTOR
PNP 100mA 30V 650mV @ 5mA, 100mA 100nA 180 @ 2mA, 5V 625mW 360MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC558BRLG ON SEMICONDUCTOR
PNP 100mA 30V 650mV @ 5mA, 100mA 100nA 180 @ 2mA, 5V 625mW 360MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC558BZL1 ON SEMICONDUCTOR
PNP 100mA 30V 650mV @ 5mA, 100mA 100nA 180 @ 2mA, 5V 625mW 360MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads
BC558BZL1G ON SEMICONDUCTOR
PNP 100mA 30V 650mV @ 5mA, 100mA 100nA 180 @ 2mA, 5V 625mW 360MHz Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads