30V,Voltage - Collector Emitter Breakdown (Max)
1.6V @ 50mA, 500mA,Vce Saturation (Max) @ Ib, Ic
27 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Mounting Type Package / Case
PMST2222,115 NXP SEMICONDUCTORS
NPN 600mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 200mW 250MHz Surface Mount SC-70, SOT-323
MMPQ2222 FAIRCHILD SEMICONDUCTOR CORP
4 NPN (Quad) 500mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 1V 1W 300MHz Surface Mount 16-SOIC (0.154", 3.90mm Width)
BSR13 FAIRCHILD SEMICONDUCTOR CORP
NPN 500mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 350mW 250MHz Surface Mount TO-236-3, SC-59, SOT-23-3
MMBT2222 FAIRCHILD SEMICONDUCTOR CORP
NPN 600mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 350mW 250MHz Surface Mount TO-236-3, SC-59, SOT-23-3
PN4141 FAIRCHILD SEMICONDUCTOR CORP
NPN 500mA 30V 1.6V @ 50mA, 500mA - 100 @ 150mA, 10V 625mW - Through Hole TO-226-3, TO-92-3 (TO-226AA)
2N2219 MICROSEMI COMMERCIAL BUSINESS UNIT
NPN 800mA 30V 1.6V @ 50mA, 500mA 10µA (ICBO) 100 @ 150mA, 10mV 800mW 250MHz Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N2219 MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 10nA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N2219A MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 10nA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JANTX2N2219 MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 100µA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AD, TO-39-3 Metal Can
JAN2N2219AL MICROSEMI CORP
NPN 800mA 30V 1.6V @ 50mA, 500mA 10nA (ICBO) 50 @ 1mA, 10V 800mW - Through Hole TO-205AA, TO-5-3 Metal Can